| US 7,414,882 B2 | ||
| Magnetic memory devices having rotationally offset magnetic storage elements therein | ||
| Won-Cheol Jeong, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Jul. 24, 2007, as Appl. No. 11/782,423. | ||
| Application 11/782423 is a division of application No. 11/342415, filed on Jan. 30, 2006, granted, now 7,262,989. | ||
| Claims priority of application No. 10-2005-0025562 (KR), filed on Mar. 28, 2005. | ||
| Prior Publication US 2007/0263431 A1, Nov. 15, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/171] | 15 Claims |
| 1. A magnetic memory device, comprising:
an array of magnetic storage elements having fixed ferromagnetic layers therein on a semiconductor substrate;
a plurality of bit lines electrically coupled to said array of magnetic storage elements, said plurality of bit lines extending
in a first direction across the semiconductor substrate that is rotated at 45° relative to a magnetic orientation of the fixed
ferromagnetic layers; and
an array of magnetic flux focusing layers extending between said plurality of bit lines and said array of magnetic storage
elements, with each of said array of magnetic flux focusing layers comprising at least one ferromagnetic material.
|