| US 7,414,315 B2 | ||
| Damascene structure with high moisture-resistant oxide and method for making the same | ||
| Tsang-Jiuh Wu, Hsinchu (Taiwan); and Syun-Ming Jang, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu (Taiwan) | ||
| Filed on Oct. 31, 2005, as Appl. No. 11/261,616. | ||
| Prior Publication US 2007/0096264 A1, May 03, 2007 | ||
| Int. Cl. H01L 23/532 (2006.01) | ||
| U.S. Cl. 257—760 [257/E23.167] | 16 Claims |
| 1. A semiconductor device, comprising:
a substrate;
an inter-metal dielectric (IMD) layer over the substrate;
a nitrogen-containing tetraethoxysilane (TEOS) oxide layer over the IMD layer; and
a metal line embedded in the TEOS oxide layer and the IMD layer,
wherein a top surface of the metal line is substantially coplanar with a top surface of the TEOS oxide layer.
|