| US 7,414,271 B2 | ||
| Thin film led | ||
| Hyeong Tag Jeon, Seoul (Korea, Republic of) | ||
| Assigned to LG Electronics Inc., Seoul (Korea, Republic of) | ||
| Filed on Oct. 10, 2006, as Appl. No. 11/544,645. | ||
| Application 11/544645 is a division of application No. 10/795287, filed on Mar. 09, 2004. | ||
| Application 10/795287 is a continuation of application No. 10/316004, filed on Dec. 11, 2002, granted, now 6,744,196. | ||
| Prior Publication US 2007/0048885 A1, Mar. 01, 2007 | ||
| Int. Cl. H01L 29/20 (2006.01); H01J 1/62 (2006.01); H01J 63/04 (2006.01) | ||
| U.S. Cl. 257—89 [313/502; 313/503] | 13 Claims |
| 1. A method of fabricating on-chip light emitting diode (LED), comprising:
providing an LED chip that emits light having a first wavelength, the LED chip including a first electrical contact and a
second electrical contact; and
forming a yellow tinted thin film layer over the LED chip uniformly in thickness over at least a top surface of the LED chip,
while the yellow tinted thin film layer has openings corresponding to the first and second electrical contacts to expose thereof,
wherein the yellow tinted thin film layer interacts with the first wavelength light to produce a light having a second wavelength.
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