	US 7,414,268 B2
	High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
Sei-Hyung Ryu, Cary, N.C. (US); Jason R. Jenny, Wake Forest, N.C. (US); Mrinal K. Das, Durham, N.C. (US); Hudson McDonald Hobgood, Pittsboro, N.C. (US); Anant K. Agarwal, Chapel Hill, N.C. (US); and John W. Palmour, Cary, N.C. (US)
Assigned to Cree, Inc., Durham, N.C. (US)
Filed on May 18, 2005, as Appl. No. 11/132,355.
Prior Publication US 2006/0261347 A1, Nov. 23, 2006
Int. Cl. H01L 31/0312 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01)

U.S. Cl. 257—77 [257/329; 257/339]

21 Claims

1. A high voltage silicon carbide (SiC) device, comprising:

a SiC insulated gate bipolar transistor (IGBT) comprising a voltage blocking substrate as a drift region of the IGBT;

a planar edge termination structure at a first surface of the voltage blocking substrate and surrounding an active region of the IGBT;

a beveled edge termination structure extending through a second surface of the voltage blocking substrate opposite the first surface of the voltage blocking substrate, wherein the voltage blocking substrate is a boule grown substrate; and

an epitaxial silicon carbide layer formed on the second surface of the voltage blocking substrate,

wherein the planar edge termination structure includes a plurality of floating guard rings;

wherein the epitaxial silicon carbide layer has a conductivity type opposite to a conductivity type of the voltage blocking substrate; and

wherein the voltage blocking substrate includes an upper portion having a substantially vertical edge and a lower portion having a beveled edge extending to a bottom surface of the epitaxial silicon carbide layer, so as to form the beveled edge termination structure.