	US 7,413,951 B2
	Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
Stephan Kudelka, Dresden (Germany); Peter Moll, Dresden (Germany); Stefan Jakschik, Kessel-Lo (Belgium); and Odo Wunnicke, Dresden (Germany)
Assigned to Qimonda AG, Munich (Germany)
Filed on Sep. 07, 2006, as Appl. No. 11/518,504.
Claims priority of application No. 10 2005 042 524 (DE), filed on Sep. 07, 2005.
Prior Publication US 2007/0059893 A1, Mar. 15, 2007
Int. Cl. H01L 21/8242 (2006.01)

U.S. Cl. 438—253 [438/254; 257/308; 257/E27.089]

27 Claims

1. A method for producing stacked capacitors for dynamic memory cells, the method comprising:

providing a semiconductor substrate;

forming a plurality of contact plugs at an upper surface of the substrate;

forming a masking layer on the upper surface of the substrate and over the contact plugs;

forming a plurality of trenches in the masking layer, each of the trenches being arranged above a respective contact plug, and each trench extending from a top surface of the masking layer to the contact plugs;

forming a conductive layer over the semiconductor substrate, the conductive layer covering side walls of the trenches and the contact plugs in order to form a first electrode of the stacked capacitor;

forming a filling material over the semiconductor substrate such that the trenches are filled with the filling material up to the top of the masking layer;

replacing an upper portion of the conductive layer of the first electrode with an insulating material by reacting the upper portion of the conductive layer such that the upper portion is converted to the insulating material, the upper portion being remote from the contact plugs;

removing the masking layer and the filling material thereby exposing side faces of the first electrodes;

forming a dielectric layer that overlies the exposed side faces of the first electrodes; and

forming a further conductive layer above the dielectric layer in order to form second electrodes of the stacked capacitors.