| US 7,413,920 B2 | ||
| Double-sided etching method using embedded alignment mark | ||
| Young-chul Ko, Yongin-si (Korea, Republic of); and Hyun-ku Jeong, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon (Korea, Republic of) | ||
| Filed on Sep. 28, 2006, as Appl. No. 11/528,619. | ||
| Claims priority of application No. 10-2005-0116636 (KR), filed on Dec. 01, 2005. | ||
| Prior Publication US 2007/0128824 A1, Jun. 07, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—50 [438/51; 438/52; 438/53; 438/54; 257/619] | 7 Claims |
| 1. A double-sided etching method using an embedded alignment mark, the method comprising:
preparing a substrate having first and second alignment marks embedded in an intermediate portion thereof;
etching an upper portion of the substrate so as to expose the first alignment mark from a first surface of the substrate;
etching the upper portion of the substrate using the exposed first alignment mark;
etching a lower portion of the substrate so as to expose the second alignment mark from a second surface of the substrate;
and
etching the lower portion of the substrate using the exposed second alignment mark.
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