| US 7,577,022 B2 | ||
| Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage | ||
| Shunsaku Muraoka, Osaka (Japan); Koichi Osano, Osaka (Japan); Satoru Mitani, Osaka (Japan); and Hiroshi Seki, Nara (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Appl. No. 11/918,983 PCT Filed Sep. 09, 2005, PCT No. PCT/JP2005/017099 § 371(c)(1), (2), (4) Date Oct. 22, 2007, PCT Pub. No. WO2006/114904, PCT Pub. Date Nov. 02, 2006. |
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| Claims priority of application No. 2005-125686 (JP), filed on Apr. 22, 2005. | ||
| Prior Publication US 2009/0067215 A1, Mar. 12, 2009 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—159 [365/148; 365/163] | 46 Claims |
| 1. An electric element, comprising:
a first electrode;
a second electrode; and
a layer connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance
characteristic,
wherein the layer conducts a substantial electric current in a forward direction extending from one of the first electrode
and the second electrode to the other electrode as compared to a reverse direction opposite of the forward direction, and
the resistance value of the layer for the forward direction increases or decreases according to a predetermined pulse voltage
applied between the first electrode and the second electrode.
|