| US 7,576,373 B1 | ||
| Nitride semiconductor device and method for manufacturing the same | ||
| Masahiro Hikita, Hyogo (Japan); Manabu Yanagihara, Osaka (Japan); Tetsuzo Ueda, Osaka (Japan); Yasuhiro Uemoto, Shiga (Japan); and Tsuyoshi Tanaka, Osaka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Nov. 13, 2006, as Appl. No. 11/595,966. | ||
| Claims priority of application No. 2006-039404 (JP), filed on Feb. 16, 2006. | ||
| Int. Cl. H01L 31/72 (2006.01) | ||
| U.S. Cl. 257—192 [257/194; 257/195; 257/196; 257/197; 257/201] | 10 Claims |
| 1. A nitride semiconductor device comprising:
a substrate;
a first nitride semiconductor layer formed above the substrate;
a second nitride semiconductor layer formed on the first nitride semiconductor layer and has band gap energy larger than that
of the first nitride semiconductor layer;
an insulating film formed on or above the second nitride semiconductor layer and has an opening formed at least in part thereof
corresponding to a gate region;
a third nitride semiconductor layer of p-type formed on or above the second nitride semiconductor layer to bury the opening
in the gate region and cover the insulating film in part; and
a gate electrode formed on or above the third nitride semiconductor layer.
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