| US 7,576,369 B2 | ||
| Deep diffused thin photodiodes | ||
| Peter Steven Bui, Westminster, Calif. (US); and Narayan Dass Taneja, Long Beach, Calif. (US) | ||
| Assigned to UDT Sensors, Inc., Hawthorne, Calif. (US) | ||
| Filed on Oct. 25, 2005, as Appl. No. 11/258,848. | ||
| Prior Publication US 2007/0090394 A1, Apr. 26, 2007 | ||
| Int. Cl. H01L 29/74 (2006.01) | ||
| U.S. Cl. 257—127 [257/184; 257/233; 257/292; 257/448; 257/E31.115] | 6 Claims |
| 1. A photodiode comprising:
a substrate with at least a front side and a back side;
a passivation layer proximate to the front side;
an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity
type;
an n+ deep drive in layer proximate to the active high resistivity layer;
an anti-reflective layer proximate to said n+ deep drive in layer; and
a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type;
wherein the five regions of alternating conductivity type comprises a first n+ region adjacent to a first deep diffused p+
region adjacent to a second n+ region adjacent to a second deep diffused p+ region adjacent to a third n+ region and wherein
the five regions of alternating conductivity type comprise a thickness of approximately 40 μm.
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