| US 7,576,365 B2 | ||
| Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same | ||
| Kazuhiro Mitani, Ichihara (Japan); Takashi Udagawa, Chichibu (Japan); and Katsuki Kusunoki, Ichihara (Japan) | ||
| Assigned to Showa Denko K.K., Tokyo (Japan) | ||
| Appl. No. 10/592,510 PCT Filed Mar. 10, 2005, PCT No. PCT/JP2005/004713 § 371(c)(1), (2), (4) Date Jan. 24, 2007, PCT Pub. No. WO2005/088738, PCT Pub. Date Sep. 22, 2005. |
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| Claims priority of provisional application 60/553989, filed on Mar. 18, 2004. | ||
| Claims priority of application No. 2004-070182 (JP), filed on Mar. 12, 2004. | ||
| Prior Publication US 2007/0170458 A1, Jul. 26, 2007 | ||
| Int. Cl. H01L 33/00 (2006.01); H01L 29/221 (2006.01); H01L 29/225 (2006.01) | ||
| U.S. Cl. 257—96 [257/103; 257/E33.025; 257/E33.03; 438/46; 438/47] | 18 Claims |
| 1. A Group III nitride semiconductor light-emitting device having a stacked structure comprising:
a transparent crystal substrate having a front surface and a back surface;
a first Group III nitride semiconductor layer of a first conductive type formed on the front surface of the transparent crystal
substrate;
a second Group III nitride semiconductor layer of a second conductive type which is opposite from the first conductive type;
a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor
layers; and
a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate,
wherein the plate body is thicker than the transparent crystal substrate.
|