| US 7,576,357 B1 | ||
| System for characterization of low-k dielectric material damage | ||
| Jianhong Zhu, Austin, Tex. (US); and David Wu, Austin, Tex. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Oct. 26, 2005, as Appl. No. 11/259,572. | ||
| Int. Cl. H01L 23/58 (2006.01) | ||
| U.S. Cl. 257—48 [257/E21.524; 324/548] | 20 Claims |
| 1. A system for detecting damage to at least one dielectric material, the system comprising:
an IC die comprising:
a substrate;
a first metal layer above the substrate, the first metal layer including a first set of conductive patterns, the first set
of conductive patterns having a first sized metal height and different metal line spaces for each pattern; and
a second metal layer above the substrate, the second metal layer including a second set of conductive patterns, the second
set of conductive patterns being substantially similar to the first set of conductive patterns, the second set of conductive
patterns having a second sized metal height, wherein the second set of conductive patterns is the same as the first set of
conductive patterns except for metal height; and
a capacitive sensor for determining a first capacitance associated with the first set of conductive patterns and a second
capacitance associated with the second set of conductive patterns, wherein the first capacitance and the second capacitance
are compared to characterize trench sidewall and bottom damage.
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