| US 7,576,314 B2 | ||
| Solid-state imaging device and method for manufacturing the same | ||
| Yasuo Takeuchi, Osaka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Jun. 30, 2006, as Appl. No. 11/480,048. | ||
| Claims priority of application No. 2005-197975 (JP), filed on Jul. 06, 2005. | ||
| Prior Publication US 2007/0007443 A1, Jan. 11, 2007 | ||
| Int. Cl. G01J 3/50 (2006.01); H05B 33/00 (2006.01) | ||
| U.S. Cl. 250—226 [257/440; 348/277] | 2 Claims |

| 1. A solid-state imaging device, comprising:
a plurality of light-receptive elements arranged in a matrix in a semiconductor substrate; and
a plurality of color filters corresponding to the plurality of light-receptive elements, respectively,
wherein the color filters comprise a colored film formed by depositing colored particles at a layer above the plurality of
light-receptive elements, and a resin with which gaps between the colored particles are filled,
the color filters are formed inside and outside of an effective pixel region of the solid-state imaging device, and
in the color filters located outside of the effective pixel region, a resin with which gaps between the colored particles
are filled is colored in a complementary color or an opposed color of a color of the colored particles.
|