| US 7,575,988 B2 | ||
| Method of fabricating a hybrid substrate | ||
| Konstantin Bourdelle, Crolle (France); Carlos Mazure, Bernin (France); and Olivier Rayssac, Grenoble (France); Pierre Rayssac, legal representative, and Gisèle Rayssac, legal representative | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Aug. 01, 2007, as Appl. No. 11/832,431. | ||
| Application 11/832431 is a continuation in part of application No. 11/624070, filed on Jan. 17, 2007. | ||
| Claims priority of application No. 06 06311 (FR), filed on Jul. 11, 2006; and application No. 07 02004 (FR), filed on Mar. 20, 2007. | ||
| Prior Publication US 2008/0014714 A1, Jan. 17, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—518 [438/455; 438/458; 438/522; 438/530; 257/E21.088; 257/E21.122; 257/E21.237; 257/E21.561; 257/E21.568] | 13 Claims |
| 1. A method for forming a hybrid substrate by direct bonding of donor and receiver substrates suitable for use in electronics,
optics, or optoelectronics, each substrate comprising a respective front face and surface, with the front face of the receiver
substrate comprising a semiconductor material at, or in proximity to, the surface, and the donor substrate including a zone
of weakness that defines a layer to be transferred from a remainder of the donor substrate, wherein the method comprises:
preparing the substrate surfaces by exposing at least the surface of the receiver substrate to a temperature from about 900°
C. to about 1200° C. in an inert atmosphere for a duration of at least 30 sec;
directly bonding together the front faces of the prepared substrates to form a composite substrate;
heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates;
and
transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness
to form the hybrid substrate.
|