	US 7,575,987 B2
	Method of plasma doping
Tomohiro Okumura, Kadoma (Japan); Ichiro Nakayama, Kadoma (Japan); and Bunji Mizuno, Ikoma (Japan)
Assigned to Panasonic Corporation, Osaka (Japan)
Filed on Oct. 25, 2006, as Appl. No. 11/585,938.
Application 11/585938 is a division of application No. 10/615851, filed on Jul. 10, 2003, abandoned.
Claims priority of application No. 2002-202483 (JP), filed on Jul. 11, 2002.
Prior Publication US 2007/0037367 A1, Feb. 15, 2007
Int. Cl. H01L 21/26 (2006.01)

U.S. Cl. 438—513 [438/510]

10 Claims

1. A plasma doping method, comprising the steps of:

supplying a gas into a vacuum container while discharging an interior gas of the vacuum container, the vacuum container having a portion made of a dielectric material and fixedly bearing boron and/or phosphorus; and

controlling a pressure of an interior of the vacuum container at a certain pressure while supplying a high frequency electric power with a first frequency to a coil or an antenna disposed adjacent the dielectric material portion of the vacuum container, generating a plasma within the vacuum container, impinging ion in the plasma on the dielectric material portion to emit the boron and/or phosphorus therefrom, and implanting the emitted boron and/or phosphorus into a substrate placed on an electrode disposed within the vacuum container.