| US 7,575,952 B2 | ||
| Manufacturing method of semiconductor device having organic semiconductor film | ||
| Tadashi Arai, Kumagaya (Japan); and Shinichi Saito, Kawasaki (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Filed on May 03, 2007, as Appl. No. 11/797,419. | ||
| Application 11/797419 is a division of application No. 11/591564, filed on Nov. 02, 2006. | ||
| Claims priority of application No. 2005-319244 (JP), filed on Nov. 02, 2005. | ||
| Prior Publication US 2007/0259478 A1, Nov. 08, 2007 | ||
| Int. Cl. H01L 51/40 (2006.01) | ||
| U.S. Cl. 438—99 [257/E21.174; 257/E29.273] | 5 Claims |
| 1. A method of manufacturing a semiconductor device having an organic semiconductor film, comprising:
forming a gate electrode on a substrate,
forming a gate insulator, said gate insulator being more hydrophobic or more hydrophilic than a surface of said substrate,
by anodizing said gate electrode,
supplying a solution containing metal-nano-particles on the surface of the substrate and not on the gate insulator, due to
the gate insulator being more hydrophobic or more hydrophilic than the surface of said substrate,
baking said solution containing the metal-nano-particles, which is on the surface of the substrate and not on the gate insulator,
so that the source and drain electrodes are formed separately from each other, and
forming an organic semiconductor layer at least covering said gate insulator.
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