| US 7,575,947 B2 | ||
| Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | ||
| Michael Iza, Santa Barbara, Calif. (US); Troy J. Baker, Santa Barbara, Calif. (US); Benjamin A. Haskell, Santa Barbara, Calif. (US); Steven P. DenBaars, Golera, Calif. (US); and Shuji Nakamura, Santa Barbara, Calif. (US) | ||
| Assigned to The Regents of the University of California, Oakland, Calif. (US); and Japan Science and Technology Agency, Kawaguchi, Saitama (Japan) | ||
| Filed on Sep. 08, 2006, as Appl. No. 11/517,797. | ||
| Claims priority of provisional application 60/715491, filed on Sep. 09, 2005. | ||
| Prior Publication US 2009/0184342 A1, Jul. 23, 2009 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—46 [438/36; 438/485; 257/79; 257/103] | 12 Claims |
| 1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate,
comprising:
(a) growing a nitride nucleation or buffer layer on a substrate; and
(b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of
the semi-polar nitride semiconductor film is parallel to the substrate's surface.
|