| US 7,575,944 B2 | ||
| Method of manufacturing nitride-based semiconductor light emitting diode | ||
| Sun Woon Kim, Seoul (Korea, Republic of); Seong Ju Park, Gwangju (Korea, Republic of); Ja Yeon Kim, Jeollabuk-do (Korea, Republic of); Min Ki Kwon, Jeollabuk-do (Korea, Republic of); Dong Ju Lee, Suwon (Korea, Republic of); and Jae Ho Han, Daejeon (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do (Korea, Republic of) | ||
| Filed on Aug. 13, 2007, as Appl. No. 11/889,392. | ||
| Claims priority of application No. 10-2007-0049633 (KR), filed on May 22, 2007. | ||
| Prior Publication US 2008/0293177 A1, Nov. 27, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—22 [438/24; 438/25; 438/27; 438/37; 438/46; 257/E21.478; 257/E29.143; 257/E33.004; 257/E33.008; 257/E33.073] | 14 Claims |
| 1. A method of manufacturing a nitride-based semiconductor light emitting diode (LED), the method comprising:
sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a
substrate;
forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer;
heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed;
removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer;
mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer
such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and
forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor
layer, respectively.
|