US 11,723,192 B2
Capacitor, method of controlling the same, and transistor including the same
Jaeho Lee, Seoul (KR); Boeun Park, Hwaseong-si (KR); Yongsung Kim, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 9, 2020, as Appl. No. 17/116,097.
Claims priority of application No. 10-2020-0057191 (KR), filed on May 13, 2020.
Prior Publication US 2021/0358694 A1, Nov. 18, 2021
Int. Cl. G11C 11/22 (2006.01); H10B 12/00 (2023.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); G01G 7/00 (2006.01); G01G 7/06 (2006.01); G11C 19/00 (2006.01); G11C 19/18 (2006.01)
CPC H10B 12/37 (2023.02) [G01G 7/00 (2013.01); G01G 7/06 (2013.01); G11C 11/221 (2013.01); G11C 11/223 (2013.01); G11C 11/2275 (2013.01); G11C 19/005 (2013.01); G11C 19/18 (2013.01); H01L 28/56 (2013.01); H01L 29/516 (2013.01); H10B 12/33 (2023.02)] 25 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first electrode;
a second electrode on the first electrode;
a ferroelectric film between the first electrode and the second electrode, the ferroelectric film having a first impedance; and
a dielectric film between the ferroelectric film and the second electrode, the dielectric film having a second impedance,
wherein the ferroelectric film and the dielectric film are configured to have a capacitance boosting operating voltage substantially equal to a control voltage applied between the first electrode and the second electrode, and
wherein the capacitance boosting operating voltage is determined by the following equation:

OG Complex Work Unit Math
where VMAX is the capacitance boosting operating voltage, Z1 is the first impedance, Z2 is the second impedance, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization change.