CPC H10B 12/315 (2023.02) [H01L 23/528 (2013.01); H01L 23/53266 (2013.01); H10B 12/34 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] | 18 Claims |
1. A semiconductor device, comprising:
a substrate including an element isolation film and an active region defined by the element isolation film;
a word line crossing the active region in a first direction; and
a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction,
wherein the bit line structure includes:
a first cell interconnection film including an amorphous material or ruthenium,
a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium,
a cell capping film on and extending along the second cell interconnection film, and
a cell barrier film between the substrate and the first cell interconnection film and extending along the first cell interconnection film.
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