US 11,723,189 B2
Semiconductor device and method of fabricating the same
Eun Young Lee, Hwaseong-si (KR); Do Hyung Kim, Seongnam-si (KR); Taek Jung Kim, Seoul (KR); Seung Jong Park, Seoul (KR); Jae Wha Park, Yongin-si (KR); and Youn Jae Cho, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 12, 2021, as Appl. No. 17/372,880.
Claims priority of application No. 10-2020-0165802 (KR), filed on Dec. 1, 2020.
Prior Publication US 2022/0173108 A1, Jun. 2, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 12/315 (2023.02) [H01L 23/528 (2013.01); H01L 23/53266 (2013.01); H10B 12/34 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate including an element isolation film and an active region defined by the element isolation film;
a word line crossing the active region in a first direction; and
a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction,
wherein the bit line structure includes:
a first cell interconnection film including an amorphous material or ruthenium,
a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium,
a cell capping film on and extending along the second cell interconnection film, and
a cell barrier film between the substrate and the first cell interconnection film and extending along the first cell interconnection film.