US 11,721,766 B2
Metal-assisted single crystal transistors
Van H. Le, Beaverton, OR (US); Ashish Agrawal, Hillsboro, OR (US); Seung Hoon Sung, Portland, OR (US); Abhishek A. Sharma, Hillsboro, OR (US); and Ravi Pillarisetty, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Mar. 22, 2022, as Appl. No. 17/701,232.
Application 17/701,232 is a division of application No. 16/648,974, granted, now 11,322,620, previously published as PCT/US2017/068993, filed on Dec. 29, 2017.
Prior Publication US 2022/0216347 A1, Jul. 7, 2022
Int. Cl. H01L 29/786 (2006.01); C30B 29/08 (2006.01); C30B 29/40 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/78654 (2013.01) [C30B 29/08 (2013.01); C30B 29/40 (2013.01); H01L 27/088 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for fabricating a back-end-of-line (BEOL) transistor, the method comprising:
forming a metal in an interlayer dielectric (ILD);
growing a semiconductor material on the metal by metal-assisted epitaxy to cause the semiconductor material to form on the ILD;
removing a first portion of the semiconductor material that is on the metal to leave a second portion of the semiconductor material that is on the ILD; and
forming the BEOL transistor using the second portion of the semiconductor material that is on the ILD.