CPC H01L 29/78654 (2013.01) [C30B 29/08 (2013.01); C30B 29/40 (2013.01); H01L 27/088 (2013.01)] | 18 Claims |
1. A method for fabricating a back-end-of-line (BEOL) transistor, the method comprising:
forming a metal in an interlayer dielectric (ILD);
growing a semiconductor material on the metal by metal-assisted epitaxy to cause the semiconductor material to form on the ILD;
removing a first portion of the semiconductor material that is on the metal to leave a second portion of the semiconductor material that is on the ILD; and
forming the BEOL transistor using the second portion of the semiconductor material that is on the ILD.
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