CPC H01L 29/7824 (2013.01) [H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/4238 (2013.01); H01L 29/66681 (2013.01); H01L 29/78624 (2013.01); H01L 21/266 (2013.01); H01L 21/28518 (2013.01); H01L 29/665 (2013.01)] | 11 Claims |
1. A lateral-diffusion metal-oxide semiconductor (LDMOS) device, comprising:
a semiconductor layer on an insulation layer;
a ring shape gate on the semiconductor layer, comprising:
a first gate portion and a second gate portion extending along a first direction and arranged in parallel along a second direction; and
two third gate portions extending along the second direction to connect the first gate portion and the second gate portion;
a first drain region and a second drain region with a first conductive type formed in the semiconductor layer at two sides of the ring shape gate;
a plurality of source regions with the first conductive type formed in the semiconductor layer surrounded by the ring shape gate;
a plurality of body contact regions with a second conductive type formed in the semiconductor layer and arranged between the source regions along the first direction;
a first body implant region and a second body implant region with the second conductive type formed in the semiconductor layer, respectively underlying part of the first gate portion and part of the second gate portion along the first direction, and being connected by the body contact regions; and
a plurality of contact plugs disposed on each of the two third gate portions of the ring shape gate to electrically connect the ring shape gate to two metal interconnections.
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