CPC H01L 29/6684 (2013.01) [H01L 23/5283 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02)] | 15 Claims |
1. A transistor, comprising:
a gate electrode;
a ferroelectric layer disposed on the gate electrode;
a channel layer disposed on the ferroelectric layer;
a gas impermeable layer disposed in between the channel layer and the gate electrode, and in contact with the ferroelectric layer;
a dielectric layer surrounding the ferroelectric layer and the channel layer, and in contact with the gas impermeable layer; and
a source line and a bit line embedded in the dielectric layer and connected to the channel layer.
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