US 11,721,747 B2
Integrated circuit, transistor and method of fabricating the same
Yu-Wei Jiang, Hsinchu (TW); Sheng-Chih Lai, Hsinchu County (TW); Feng-Cheng Yang, Hsinchu County (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 12, 2021, as Appl. No. 17/400,138.
Prior Publication US 2023/0045806 A1, Feb. 16, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 51/30 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01); H10B 51/30 (2023.01)
CPC H01L 29/6684 (2013.01) [H01L 23/5283 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A transistor, comprising:
a gate electrode;
a ferroelectric layer disposed on the gate electrode;
a channel layer disposed on the ferroelectric layer;
a gas impermeable layer disposed in between the channel layer and the gate electrode, and in contact with the ferroelectric layer;
a dielectric layer surrounding the ferroelectric layer and the channel layer, and in contact with the gas impermeable layer; and
a source line and a bit line embedded in the dielectric layer and connected to the channel layer.