CPC H01L 29/66795 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/3003 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01)] | 20 Claims |
1. A device comprising:
an isolation region on a substrate;
a fin comprising a silicon portion and a silicon germanium portion over the silicon portion, the silicon portion and a lower portion of the silicon germanium portion disposed in the isolation region, an upper portion of the silicon germanium portion protruding above the isolation region, edge portions of the upper portion of the silicon germanium portion having a greater germanium concentration than edge portions of the lower portion of the silicon germanium portion, edge portions of the upper portion of the silicon germanium portion having a greater germanium concentration than a center of the upper portion of the silicon germanium portion; and
a gate stack on the upper portion of the silicon germanium portion.
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