CPC H01L 29/42376 (2013.01) [H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66431 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01)] | 20 Claims |
1. A quantum dot device, comprising:
a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material;
a quantum well stack at least partially disposed in the trench, wherein a material of the quantum well stack is in contact with the bottom of the trench, and the material of the quantum well stack is different from the first material;
a first doped region disposed in the trench and proximate a first end of the trench;
a second doped region disposed in the trench and proximate a second end of the trench, the second end of the trench opposite the first end of the trench; and
a plurality of gates provided over a continuous portion of the quantum well stack between the first doped region and the second doped region.
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