US 11,721,643 B2
Package structure
Po-Chen Lai, Hsinchu County (TW); Chin-Hua Wang, New Taipei (TW); Ming-Chih Yew, Hsinchu (TW); Che-Chia Yang, Taipei (TW); Shu-Shen Yeh, Taoyuan (TW); Po-Yao Lin, Hsinchu County (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/350,317.
Prior Publication US 2022/0406730 A1, Dec. 22, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/16227 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3512 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a redistribution structure;
a semiconductor die over the redistribution structure, wherein the semiconductor die has a first sidewall and a second sidewall connected to each other; and
bonding elements below the redistribution structure, comprising
a first row of bonding elements and a second row of bonding elements, wherein the bonding elements in the first row are arranged in a direction parallel to an extending line of the second sidewall, the bonding elements in the second row are arranged in a direction parallel to the extending line of the second sidewall, and in a plan view, the second row of bonding elements is arranged between the first row of bonding elements and the extending line of the second sidewall, wherein a minimum distance between the second row of bonding elements and the first sidewall is greater than a minimum distance between the first row of bonding elements and the first sidewall.