US 11,721,599 B2
Semiconductor testkey pattern and test method thereof
Linshan Yuan, Fujian (CN); Guang Yang, Fujian (CN); Jinjian Ouyang, Fujian (CN); Jiawei Lyu, Fujian (CN); Chin-Chun Huang, Hsinchu County (TW); and Wen Yi Tan, Fujian (CN)
Assigned to United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed by United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed on Mar. 30, 2021, as Appl. No. 17/216,697.
Claims priority of application No. 202110234796.7 (CN), filed on Mar. 3, 2021.
Prior Publication US 2022/0285235 A1, Sep. 8, 2022
Int. Cl. G01R 27/08 (2006.01); H01L 21/66 (2006.01); G01R 27/02 (2006.01); G01R 27/14 (2006.01); G01R 17/10 (2006.01); H01L 27/06 (2006.01); G01R 31/28 (2006.01); G01R 27/26 (2006.01)
CPC H01L 22/34 (2013.01) [G01R 17/105 (2013.01); G01R 27/02 (2013.01); G01R 27/14 (2013.01); G01R 27/2635 (2013.01); G01R 31/2831 (2013.01); G01R 31/2858 (2013.01); H01L 27/0611 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor testkey pattern, comprising:
a high density device region; and
a plurality of resistor pairs surrounding the high density device region, wherein each resistor pair comprises two mutually symmetrical resistor patterns, wherein each resistor pattern comprises a plurality of strip-shaped resistor patterns arranged in parallel with each other, and a plurality of wires connect the strip-shaped resistor patterns in series with each other, and wherein the plurality of resistor pairs comprise a plurality of resistor pairs arranged along a first direction, and the remaining part of the testkey pattern comprises a plurality of resistor pairs arranged along a second direction.