US 11,721,552 B2
Semiconductor device
Feng-Yi Chang, Tainan (TW); Yu-Cheng Tung, Kaohsiung (TW); and Fu-Che Lee, Taichung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW); and Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW); and Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Dec. 26, 2021, as Appl. No. 17/561,989.
Application 17/561,989 is a division of application No. 16/136,265, filed on Sep. 20, 2018, granted, now 11,244,829.
Claims priority of application No. 201810875849.1 (CN), filed on Aug. 3, 2018.
Prior Publication US 2022/0122845 A1, Apr. 21, 2022
Int. Cl. H01L 21/027 (2006.01); H01L 21/033 (2006.01); H10B 12/00 (2023.01); H01L 21/3213 (2006.01)
CPC H01L 21/0337 (2013.01) [H10B 12/03 (2023.02); H01L 21/32139 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate; and
a material layer disposed on the substrate, the material layer comprising a plurality of first patterns, a plurality of second patterns and a plurality of third patterns, the first patterns and the second patterns being parallel and separately arranged in an array arrangement, the second patterns being disposed at two opposite sides of the first patterns, the third patterns being parallel and separately disposed at another two opposite sides of the first patterns, wherein a dimension of each of the third patterns is greater than that of each of the first patterns, and each of the third patterns has a continuously shrunk width which is continuously shrunk along a direction being away from the first patterns.