US 11,721,542 B2
Dual plasma pre-clean for selective gap fill
Yi Xu, San Jose, CA (US); Yufei Hu, Fremont, CA (US); Kazuya Daito, Milipitas, CA (US); Yu Lei, Belmont, CA (US); Dien-Yeh Wu, San Jose, CA (US); and Jallepally Ravi, San Ramon, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 23, 2020, as Appl. No. 17/101,077.
Claims priority of provisional application 63/042,275, filed on Jun. 22, 2020.
Claims priority of provisional application 62/960,293, filed on Jan. 13, 2020.
Claims priority of provisional application 62/941,148, filed on Nov. 27, 2019.
Prior Publication US 2021/0159070 A1, May 27, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); B08B 7/00 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02068 (2013.01) [B08B 7/0035 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32926 (2013.01); H01L 21/67028 (2013.01); H01J 2237/335 (2013.01); H01L 21/76879 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor, the method comprising:
exposing a substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric; and
exposing the substrate to a tungsten precursor to selectively form a tungsten film on the substrate, the tungsten film forming selectively on the metal bottom relative to the dielectric sidewalls and the field of dielectric,
wherein the metal bottom comprises one or more of tungsten (W), cobalt (Co), or ruthenium (Ru),
wherein the processing chamber comprises a dual plasma lid performing the dual plasma treatment,
wherein the processing chamber comprises at least one side wall defining an internal volume, the internal volume comprising a remote plasma unit and a direct plasma unit, and
wherein the dual plasma treatment comprises simultaneously or sequentially exposing the surface structure to a direct plasma generated by the direct plasma unit and to a remote plasma generated by the remote plasma unit, the direct plasma comprising one or more of a direct oxygen plasma and a direct hydrogen plasma, and the remote plasma comprising one or more of a remote oxygen plasma and a remote hydrogen plasma.