CPC G11C 11/40611 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4096 (2013.01); G11C 11/40622 (2013.01); G11C 11/40626 (2013.01)] | 17 Claims |
1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, to perform operations comprising:
determining a current refresh frequency associated with the memory device, the current refresh frequency specifying a rate of performing refresh operations on data stored at the memory device;
computing an updated refresh frequency by updating the current refresh frequency based on a criterion reflecting a result of comparing one or more operating parameters of the memory device to their respective threshold values, wherein the one or more operating parameters comprise at least a voltage demarcation level (VDM) retry rate of the memory device; and
performing a refresh operation on data stored at the memory device according to the updated refresh frequency.
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