US 11,721,375 B2
Methods of charging local input/output lines of memory devices, and related devices and systems
Jin Lan, Tokyo (JP); and Genta Takaya, Tokyo (JP)
Assigned to Micron Technology, Inc, Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 1, 2022, as Appl. No. 18/51,579.
Application 18/051,579 is a division of application No. 16/858,370, filed on Apr. 24, 2020, granted, now 11,538,510.
Prior Publication US 2023/0116292 A1, Apr. 13, 2023
Int. Cl. G11C 5/00 (2006.01); G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 7/10 (2006.01)
CPC G11C 7/22 (2013.01) [G11C 7/1048 (2013.01); G11C 7/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a memory device, comprising:
receiving a read command;
in response to the read command:
charging a local input/output (LIO) line high;
connecting the LIO line to a digit line to charge the LIO line based on a charge of the digit line, the digit line coupled to a memory cell of the memory device; and
connecting a main input/output (MIO) line to the LIO line to charge the MIO line based on a charge of the LIO line; and
receiving an additional command without precharging a local input/output (LIO) line subsequent to performing the read operation and prior to receiving the additional command.