US 11,720,738 B2
Leakage analysis on semiconductor device
Cheng-Hua Liu, Hsinchu County (TW); Yun-Xiang Lin, Hsinchu County (TW); Yuan-Te Hou, Hsinchu (TW); and Chung-Hsing Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 7, 2021, as Appl. No. 17/315,023.
Application 17/315,023 is a division of application No. 16/586,658, filed on Sep. 27, 2019, granted, now 11,030,381.
Claims priority of provisional application 62/793,350, filed on Jan. 16, 2019.
Prior Publication US 2021/0264093 A1, Aug. 26, 2021
Int. Cl. G06F 30/30 (2020.01); G06F 30/398 (2020.01); G06F 30/367 (2020.01); G06F 30/20 (2020.01); G06F 30/39 (2020.01); G06F 119/10 (2020.01); G06F 30/392 (2020.01); G06F 119/18 (2020.01); G06F 111/20 (2020.01)
CPC G06F 30/398 (2020.01) [G06F 30/20 (2020.01); G06F 30/367 (2020.01); G06F 30/39 (2020.01); G06F 30/392 (2020.01); G06F 2111/20 (2020.01); G06F 2119/10 (2020.01); G06F 2119/18 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A system, comprising:
a library containing at least one leakage lookup table related to leakage current values for different cell abutment cases of abutted cells in a semiconductor device, wherein the cell abutment cases are associated with terminal types of cell edges of the abutted cells;
a processor configured to perform an analysis to detect boundaries between the abutted cells, identify attributes associated with the terminal types of the cell edges, identify the cell abutment cases based on the attributes, and calculate maximal boundary leakages between the abutted cells based on leakage current values associated with the cell abutment cases and leakage probabilities associated with the cell abutment cases; and
an output interface for outputting boundary leakages corresponding to at least the maximal boundary leakages in the semiconductor device,
wherein the processor is further configured to determine minimal boundary leakages of the cell abutment cases based on the leakage probabilities, and
the boundary leakages are calculated at least based on the maximal boundary leakages and the minimal boundary leakages.