US 11,720,286 B2
Extended cross-temperature handling in a memory sub-system
Vamsi Pavan Rayaprolu, San Jose, CA (US); Sampath K. Ratnam, Boise, ID (US); Sivagnanam Parthasarathy, Carlsbad, CA (US); Mustafa N. Kaynak, San Diego, CA (US); Kishore Kumar Muchherla, Fremont, CA (US); Shane Nowell, Boise, ID (US); Peter Feeley, Boise, ID (US); and Qisong Lin, El Dorado Hills, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 1, 2021, as Appl. No. 17/516,009.
Application 17/516,009 is a continuation of application No. 16/041,649, filed on Jul. 20, 2018, granted, now 11,163,488.
Prior Publication US 2022/0129204 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device configured to operate in a temperature range that spans beyond a nominal temperature range; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining, from a temperature marker, a programming temperature at which data is originally written in the memory device; and
in response to determining that the data is originally written at the programming temperature that is outside of the nominal temperature range, re-writing the data in the memory device when an operating temperature of the memory device is within the nominal temperature range.