US 11,720,278 B2
Data removal marking in a memory device
Huachen Li, Shanghai (CN); Xu Zhang, Shanghai (CN); Zhong Xian Li, Shanghai (CN); Xinghui Duan, Shanghai (CN); Xing Wang, Shanghai (CN); and Tian Liang, Shanghai (CN)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 20, 2022, as Appl. No. 17/869,262.
Application 17/869,262 is a continuation of application No. 16/959,064, granted, now 11,409,462, previously published as PCT/CN2019/130387, filed on Dec. 31, 2019.
Prior Publication US 2022/0357877 A1, Nov. 10, 2022
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01); G06F 12/0882 (2016.01)
CPC G06F 3/0656 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0652 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 12/0882 (2013.01); G06F 2212/7201 (2013.01); G06F 2212/7205 (2013.01); G06F 2212/7209 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A NAND storage device, the NAND storage device comprising:
an array of NAND storage devices;
a controller including:
a memory to hold a buffer; and
processing circuitry to:
count data portions specified in a delete command, the delete command provided to remove the data portions from a NAND storage device in the array of NAND storage devices; and
write the data portions in the buffer when the count of data portions is below a threshold instead of updating a logical-to-physical mapping of the data portions.