US 11,717,227 B2
Signal processing device and signal processing method
Xinyi Li, Beijing (CN); Huaqiang Wu, Beijing (CN); He Qian, Beijing (CN); and Bin Gao, Beijing (CN)
Assigned to Tsinghua University, Beijing (CN)
Filed by Tsinghua University, Beijing (CN)
Filed on Jan. 23, 2020, as Appl. No. 16/751,110.
Claims priority of application No. 201910081039.3 (CN), filed on Jan. 28, 2019.
Prior Publication US 2020/0237311 A1, Jul. 30, 2020
Int. Cl. G11C 13/00 (2006.01); A61B 5/00 (2006.01); A61B 5/316 (2021.01); A61B 5/374 (2021.01); A61B 5/389 (2021.01)
CPC A61B 5/7207 (2013.01) [A61B 5/316 (2021.01); A61B 5/374 (2021.01); A61B 5/389 (2021.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2213/77 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A signal processing device, comprising a receiver, a memristor array and a classifier, wherein the receiver is configured to receive a first signal;
the memristor array comprises a plurality of memristor units, each of the plurality of memristor units comprises a memristor, and the memristor array is configured to apply the first signal that has been received to at least one memristor unit in the plurality of memristor units, such that at least one memristor unit in the plurality of memristor units encodes the first signal into a second signal, the second signal refers to a memristor resistance value distribution of the memristor array, and output the second signal based on the memristor resistance value distribution of the memristor array, wherein the second signal comprises at least one conductance variation ratio of at least one memristor, wherein each conductance variation ratio refers to a ratio of a difference between a conductance of a memristor after the first signal is applied and the conductance of the memristor before the first signal is applied to the conductance of the memristor before the first signal is applied; and
the classifier is configured to classify the second signal based on the memristor resistance value distribution of the memristor array to obtain a type of the first signal, and the second signal is outputted from the memristor array.