| US 7,573,745 B2 | ||
| Multiple use memory chip | ||
| Eduardo Maayan, Kfar Saba (Israel); and Boaz Eitan, Hofit (Israel) | ||
| Assigned to Saifun Semiconductors Ltd., Netanya (Israel) | ||
| Filed on Oct. 31, 2007, as Appl. No. 11/979,182. | ||
| Application 11/979182 is a continuation of application No. 11/246193, filed on Oct. 11, 2005. | ||
| Application 11/246193 is a continuation of application No. 11/024750, filed on Dec. 30, 2004, granted, now 6,954,382. | ||
| Application 11/024750 is a continuation of application No. 10/191451, filed on Jul. 10, 2002, granted, now 6,917,544. | ||
| Prior Publication US 2008/0130359 A1, Jun. 05, 2008 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.17 [365/63; 365/185.03] | 19 Claims |
| 1. A method of operating a non-volatile memory (“NVM”) device comprising:
operating a first set of NVM cells as a first type of flash memory; and operating a second set of NVM cells having substantially
similar structure to cells in said first set of cells as a second type of flash memory.
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