US 7,573,734 B2
	Magnetoelectric device and method for writing non-volatile information into said magnetoelectric device
Josep Fontcuberta I Griñó, Barcelona (Spain); Florencio Sánchez Barrena, Bellaterra (Spain); Xavier Matí I Rovirosa, Bellaterra (Spain); David Hrabovsky, Bellaterra (Spain); Vladimir Laukhin, Barcelona (Spain); and Vassil Skumryev, Barcelona (Spain)
Assigned to Consejo Superior De Investigaciones Cientificas, Madrid (Spain); Universitat Autonoma De Barcelona, Bellaterra-Barcelona (Spain); and Institucio Catalana De Recerca I Estudis Avancats, Barcelona (Spain)
Filed on Jul. 13, 2007, as Appl. No. 11/777,623.
Prior Publication US 2009/0016097 A1, Jan. 15, 2009
Int. Cl. G11C 11/22 (2006.01)

U.S. Cl. 365—145  [365/158]

16 Claims

1. A device comprising at least a first ferromagnetic layer (202) and an element (204) exchange-bias coupled to this layer in at least one place through an interface (208), for controlling the magnetic state of the ferromagnetic layer (202) in the coupling place with an electrical field applied at least on the element, the element comprising a material with clamped antiferromagnetic and ferroelectric characteristics.