| US 7,573,321 B2 | ||
| High voltage generator | ||
| Dong-Myung Eun, Gyeonggi-do (Korea, Republic of); and Jung-Hwa Lee, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Sep. 19, 2007, as Appl. No. 11/858,071. | ||
| Claims priority of application No. 10-2006-0090476 (KR), filed on Sep. 19, 2006. | ||
| Prior Publication US 2008/0068069 A1, Mar. 20, 2008 | ||
| Int. Cl. G05F 1/10 (2006.01); H03K 3/01 (2006.01) | ||
| U.S. Cl. 327—537 [327/536] | 17 Claims |
| 1. A high voltage generator comprising:
a high voltage output node;
a plurality of boost nodes configured to be sequentially boosted by a plurality of pump circuits in response to a sequentially
enabled plurality of pump signals;
a plurality of switches configured to sequentially connect the boost nodes and the high voltage output node such that charges
boosted to a boost node are transferred to a subsequently boosted boost node and charges boosted to a last boosted boost node
of the plurality of boost nodes are transferred to the high voltage output node; and
a field relieving unit connected to at least one of the plurality of switches and configured to reduce a voltage of one terminal
of at least one of the plurality of switches when the boosted charges are transferred across the at least one of the plurality
of switches,
wherein the field relieving unit comprises at least one forward diode connected in parallel with at least one of the plurality
of switches.
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