| US 7,573,120 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Katsuaki Natori, Yokohama (Japan); Hiroyuki Kanaya, Yokohama (Japan); and Koji Yamakawa, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 30, 2005, as Appl. No. 11/170,316. | ||
| Claims priority of application No. 2005-132761 (JP), filed on Apr. 28, 2005. | ||
| Prior Publication US 2006/0244022 A1, Nov. 02, 2006 | ||
| Int. Cl. H01L 29/93 (2006.01) | ||
| U.S. Cl. 257—532 [257/E27.017; 257/E27.095] | 9 Claims |
| 1. A semiconductor device comprising:
a semiconductor substrate;
a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper
electrodes;
a first silicon oxide film formed above the upper electrode;
a first protective film formed on the first silicon oxide film by an ALD process;
a second silicon oxide film formed in such a manner as to coat the first protective film, the first silicon oxide film, and
the capacitor; and
a second protective film formed on the second silicon oxide film by the ALD process.
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