| US 7,573,106 B2 | ||
| Semiconductor device and manufacturing method therefor | ||
| Tomohiro Saito, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 26, 2005, as Appl. No. 11/137,510. | ||
| Claims priority of application No. 2004-328708 (JP), filed on Nov. 12, 2004. | ||
| Prior Publication US 2006/0102962 A1, May 18, 2006 | ||
| Int. Cl. H01L 29/78 (2006.01) | ||
| U.S. Cl. 257—377 [257/388; 257/412] | 5 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
forming a gate insulation film on a semiconductor substrate;
forming a first gate electrode and a second gate electrode on the gate insulation film, the area of the second gate electrode
on the surface of the semiconductor substrate being larger than that of the first gate electrode;
selectively etching or grinding an upper part of the second gate electrode so that the thickness of the second gate electrode
becomes smaller than the thickness of the first gate electrode;
depositing a metal film on the first gate electrode and the second gate electrode; and
siliciding the whole of the first gate electrode and the whole of the second gate electrode in a same siliciding process.
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