| US 7,573,076 B2 | ||
| Vertical gallium-nitride based light emitting diode | ||
| Doo Go Baik, Suwon (Korea, Republic of); Bang Won Oh, Seongnam (Korea, Republic of); Seok Beom Choi, Daejeon (Korea, Republic of); and Su Yeol Lee, Seongnam (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyunggi-do (Korea, Republic of) | ||
| Filed on Dec. 06, 2006, as Appl. No. 11/634,112. | ||
| Claims priority of application No. 10-2005-0117958 (KR), filed on Dec. 06, 2005. | ||
| Prior Publication US 2007/0126022 A1, Jun. 07, 2007 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—103 [257/80; 257/81; 438/22; 438/69] | 5 Claims |
| 1. A vertical gallium-nitride (GaN)-based light emitting diode (LED) comprising:
a support layer;
a p-electrode formed on the support layer;
a p-type GaN layer formed on the p-electrode;
an active layer formed on the p-type GaN layer;
an n-type GaN layer for an n-type electrode contact, formed on the active layer;
an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and
an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
|