| US 7,572,736 B2 | ||
| Method of dry-etching semiconductor devices | ||
| Yun-Sook Chae, Suwon (Korea, Republic of); Ji-Soo Kim, Yongin (Korea, Republic of); and Chang-jin Kang, Suwon (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-Si (Korea, Republic of) | ||
| Filed on Sep. 30, 2002, as Appl. No. 10/261,595. | ||
| Claims priority of application No. 2001-60997 (KR), filed on Sep. 29, 2001. | ||
| Prior Publication US 2004/0063327 A1, Apr. 01, 2004 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—714 [438/706; 438/715; 134/1.1] | 24 Claims |
| 1. A method of dry-etching a semiconductor device, the method comprising:
forming a material layer to be etched on a semiconductor substrate;
forming photoresist patterns on the material layer using photoresist suitable for an exposure light source having a wavelength
equal to or less than about 193 nm
loading the semiconductor substrate, on which the photoresist patterns are formed, on a stage in a dry-etching chamber; and
dry-etching the material layer with lowering the temperature of the semiconductor substrate to be equal to or lower than a
predetermined temperature,
wherein dry-etching the material layer with lowering the temperature of the semiconductor substrate comprises:
unloading the semiconductor substrate from the dry-etching chamber during the step of dry-etching process;
purging the inside of the dry-etching chamber with a purge gas; and
loading the unloaded semiconductor substrate into the dry-etching chamber to etch the material layer.
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