| US 7,572,724 B2 | ||
| Doped single crystal silicon silicided eFuse | ||
| Edward J. Nowak, Essex Junction, Vt. (US); Jed H. Rankin, South Burlington, Vt. (US); William R. Tonti, Essex Junction, Vt. (US); and Richard Q. Williams, Essex Junction, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Mar. 06, 2008, as Appl. No. 12/43,226. | ||
| Application 12/043226 is a division of application No. 11/161320, filed on Jul. 29, 2005, granted, now 7,382,036. | ||
| Prior Publication US 2008/0153278 A1, Jun. 26, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—601 [438/149; 438/201] | 20 Claims |
| 1. A method of forming an eFuse comprising:
providing a single crystal silicon-on-insulator (SOI) structure comprising a single crystal silicon layer on a first insulator
layer;
patterning said single crystal silicon layer into a strip;
doping said single crystal silicon layer;
siliciding at least an upper portion of said single crystal silicon layer to form a silicided strip;
forming at least one second insulator on said silicide strip, so as to isolate said silicided strip from surrounding structures;
and
forming electrical contacts through said second insulator to ends of said silicided strip.
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