| US 7,572,717 B2 | ||
| Method of manufacturing semiconductor device | ||
| Takayo Kobayashi, Yokohama (Japan); and Kentaro Imamizu, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 31, 2006, as Appl. No. 11/495,623. | ||
| Claims priority of application No. P2005-267011 (JP), filed on Sep. 14, 2005. | ||
| Prior Publication US 2007/0059924 A1, Mar. 15, 2007 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—584 [438/672; 257/E21.579; 257/E21.585] | 13 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
forming on a semiconductor substrate an insulating film having a recessed portion in a surface thereof, the recessed portion
forming a space over the semiconductor substrate;
forming a barrier film on an inside face of the recessed portion and on the insulating film;
forming a seed film on the barrier film;
forming a first metal film on the seed film so as to fill up the space formed by the recessed portion;
forming on the first metal film a second metal film having lower vacancy density than that of the first metal film;
forming on the second metal film a compression stress applying film which applies compression stress to the first metal film
through the second metal film when heat treatment is applied;
performing heat treatment on the first metal film, the second metal film and the compression stress applying film; and
removing the second metal film and the first metal film except a portion thereof filling up the recessed portion to thereby
form a wiring in the recessed portion.
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