| US 7,572,715 B2 | ||
| Selective epitaxy process with alternating gas supply | ||
| Yihwan Kim, Milpitas, Calif. (US); and Arkadii V. Samoilov, Sunnyvale, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on May 07, 2007, as Appl. No. 11/745,416. | ||
| Application 11/745416 is a division of application No. 11/001774, filed on Dec. 01, 2004, granted, now 7,312,128. | ||
| Prior Publication US 2007/0207596 A1, Sep. 06, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C23C 16/24 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—488 [438/489; 438/969; 257/E21.415; 257/E21.09; 257/E21.092; 257/E21.102; 257/E21.115] | 26 Claims |
| 1. A method of epitaxially forming a silicon-containing material on a substrate surface, comprising:
positioning into a process chamber a substrate comprising a monocrystalline surface and at least a second surface selected
from the group consisting of an amorphous surface, a polycrystalline surface, and combinations thereof;
exposing the substrate to a deposition gas comprising a silicon source and a second elemental source selected from the group
consisting of a germanium source, a carbon source, and combinations thereof to deposit an epitaxial layer on the monocrystalline
surface and a polycrystalline layer on the second surface; and subsequently
exposing the substrate to an etching gas comprising at least a chlorine containing compound to etch the polycrystalline layer
at a faster rate than the epitaxial layer, wherein the epitaxial layer has a graded concentration of a second element deposited,
at least in part, by the second elemental source.
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