| US 7,572,714 B2 | ||
| Film taking-off method | ||
| Cécile Aulnette, Grenoble (France); Ian Cayrefourcq, St. Nazire les Eymes (France); and Carlos Mazure, Bernin (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Sep. 06, 2005, as Appl. No. 11/221,045. | ||
| Claims priority of application No. 05 07300 (FR), filed on Jul. 08, 2005. | ||
| Prior Publication US 2007/0023867 A1, Feb. 01, 2007 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—458 [438/514; 257/E21.568] | 24 Claims |
| 1. A method of producing a film for electronic, optic or optronic applications from a wafer, which comprises:
first forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less
than that of the wafer;
forming a protective layer over at least the step to prevent atomic species from being implanted into the step; and
thereafter selectively implanting atomic species through a face of the wafer but not through the step to form an implanted
zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone.
|