| US 7,572,710 B2 | ||
| Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects | ||
| Cem Basceri, Reston, Va. (US); Gurtej S. Sandhu, Boise, Id. (US); and H. Montgomery Manning, Eagle, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Sep. 21, 2006, as Appl. No. 11/525,707. | ||
| Application 11/525707 is a division of application No. 10/932218, filed on Sep. 01, 2004, granted, now 7,241,705. | ||
| Prior Publication US 2007/0015358 A1, Jan. 18, 2007 | ||
| Int. Cl. H01L 21/338 (2006.01); H01L 21/337 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/8242 (2006.01); H01L 21/8222 (2006.01); H01L 21/20 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—381 [438/171; 438/189; 438/210; 438/238; 438/239; 438/243; 438/244; 438/250; 438/253; 438/329; 438/386; 438/387; 438/393; 438/396; 438/622; 438/623; 438/624; 438/625; 438/626] | 40 Claims |
| 1. A method of forming a local interconnect, comprising:
providing capacitor dielectric material proximate a first capacitor electrode over a semiconductor substrate, at least some
of the capacitor dielectric material extending to be received between first and second node regions of the semiconductor substrate;
and
exposing the capacitor dielectric material received between the first and second node regions to conditions effective to change
it from being electrically insulative to being electrically conductive and forming a local interconnect from the changed material
which electrically connects the first and second node regions.
|