| US 7,572,647 B2 | ||
| Internal balanced coil for inductively coupled high density plasma processing chamber | ||
| Robert Chen, Fremont, Calif. (US); Canfeng Lai, Fremont, Calif. (US); Xinglong Chen, San Jose, Calif. (US); Weiyi Luo, Fremont, Calif. (US); Zhong Qiang Hua, Saratoga, Calif. (US); Siqing Lu, San Jose, Calif. (US); Muhammad Rasheed, Fremont, Calif. (US); Qiwei Liang, Fremont, Calif. (US); Dmitry Lubomirsky, Cupertino, Calif. (US); and Ellie Y. Yieh, San Jose, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Feb. 02, 2007, as Appl. No. 11/670,728. | ||
| Prior Publication US 2008/0188087 A1, Aug. 07, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—5 [438/788; 257/E21.528; 257/E21.478; 427/9; 427/255.23] | 7 Claims |
| 1. A method of depositing a layer with an HDP/CVD semiconductor processing chamber, the method comprising:
determining a value of at least one HDP/CVD deposition parameter to deposit the layer on a semiconductor wafer;
determining an etch rate of a protective chamber coating disposed on a surface of a structure inside the chamber based on
the value of the HDP/CVD deposition parameter;
determining a value of a chamber season parameter to form the protective chamber coating on the surface of the structure inside
the chamber in response to the etch rate;
seasoning the chamber to form the protective coating on the surface of the structure inside the chamber based on the value
of the chamber season parameter;
inserting a semiconductor wafer into the chamber;
applying the HDP/CVD process to deposit the layer on the wafer based on the value of the HDP/CVD deposition parameter, wherein
the protective coating is etched from the surface of the structure inside the chamber when the layer is deposited on the wafer;
stopping the HDP/CVD process before the protective coating is removed from the surface and a portion of the surface of the
structure is exposed; and
removing the wafer from the chamber.
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