| US 7,572,334 B2 | ||
| Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application | ||
| Arnold V. Kholodenko, San Francisco, Calif. (US); Robert Z. Bachrach, Burlingame, Calif. (US); and Mark Mandelboym, Santa Clara, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jan. 03, 2006, as Appl. No. 11/325,089. | ||
| Prior Publication US 2007/0158654 A1, Jul. 12, 2007 | ||
| Int. Cl. C30B 11/00 (2006.01); B05C 11/00 (2006.01) | ||
| U.S. Cl. 117—200 [117/211; 117/217; 118/58; 118/300] | 3 Claims |
| 1. An apparatus for forming a polycrystalline semiconductor sheet comprising:
a deposition reactor comprising:
a crucible having an outer wall, a base, and a lid that form a crucible processing region and a deposition port that is formed
in the base, wherein the deposition port is in fluid communication with the crucible processing region;
a heater in thermal communication with the crucible, wherein the heater is adapted to heat a feed material positioned in the
crucible processing region to a liquid state; and
a gas delivery port that is in fluid communication with a fluid source, the feed material positioned in the crucible processing
region, and the deposition port; and
a sheet support platen having a collection region that is positioned adjacent the base to receive feed material delivered
through the deposition port from the crucible processing region, wherein a surface of the collection region of the sheet support
platen comprises a material selected from the group consisting of silicon carbide, silicon nitride, boron nitride, graphite,
and boron carbide.
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