| US 7,572,168 B1 | ||
| Method and apparatus for high speed singulation | ||
| Apichart Phaowongsa, Samutprakam (Thailand); Somchai Nondhasitthichai, Bangna Bangkok (Thailand); Charun Sae-lee, Kongtun Kontoey Bangkok (Thailand); and Praphan Sararat, Wangnumyen Sakaeo (Thailand) | ||
| Assigned to UTAC Thai Limited, Bangna, Bangkok (Thailand) | ||
| Filed on Mar. 13, 2007, as Appl. No. 11/717,912. | ||
| Claims priority of provisional application 60/792093, filed on Apr. 13, 2006. | ||
| Int. Cl. B24B 49/00 (2006.01); B28D 1/04 (2006.01) | ||
| U.S. Cl. 451—7 [125/13.01] | 37 Claims |
| 1. A method of singulation for a semiconductor device, the method comprising:
applying a blade to a molded strip comprising the semiconductor device, wherein the blade generates a kerf at a contact point
between the blade and the molded strip, the kerf having a plurality of particles, wherein the kerf separates the semiconductor
device from the molded strip;
cooling a synthetic lubricant by a chiller;
controlling application of the cooled synthetic lubricant to at least two application points by use of a temperature control
device coupled to the chiller;
cooling and lubricating the blade at a first application point by directing the cooled synthetic lubricant to the first application
point, wherein said first application point is the contact point;
cooling, lubricating and rinsing particles from a second application point by directing cooled synthetic lubricant into the
second application point, wherein said second application point is the kerf, wherein rinsing the kerf removes a substantial
quantity of the particles from the kerf.
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