| US 7,572,052 B2 | ||
| Method for monitoring and calibrating temperature in semiconductor processing chambers | ||
| Jallepally Ravi, Santa Clara, Calif. (US); Maitreyee Mahajani, Saratoga, Calif. (US); and Yi-Chiau Huang, Fremont, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jul. 10, 2007, as Appl. No. 11/775,720. | ||
| Prior Publication US 2009/0016406 A1, Jan. 15, 2009 | ||
| Int. Cl. G01K 15/00 (2006.01) | ||
| U.S. Cl. 374—1 [374/2] | 23 Claims |
| 1. A method for measuring temperature, comprising:
forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive
to thermal exposure;
exposing the target film to an environment at a second temperature in a range higher than the first temperature;
measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature;
and
determining the second temperature according to the measured one or more properties.
|